Features 1、High performance InGaP HBT MMICamplifier utilize a Darlington configuration with an active bias network 2、The active bias network provides stable current over temperature and process Beta variations 3、Designed to run directly from a 5V supply, does not require a dropping resistor as compared to typical Darlington amplifiers 4、The product is designed for high linearity 5V gain block applications that require small size and minimal external components 5、It is internally matched to 50 Ω Specification Features: High performance InGaP HBT MMIC amplifier utilize a Darlington configuration with an active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 5V supply, does not require a dropping resistor as compared to typical Darlington amplifiers. The product is designed for high linearity 5V gain block applications that require small size and minimal external components. It is internally matched to 50 Ω. Specifications: Power supply voltage: typical +5V (typical current value 75mA) Gain: typical value 20dB @2G, input output impedance: 50 ohms Maximum output power: P1db 20dBm (@2ghz Input signal: <+10dBm (> +10dBm input signal has been distortion) Bandwidth: 0.05-6Ghz (different frequencies of gain are different) Noise coefficient: 4.1dB @1Ghz Size: 3.2 x2.3cm/1.3 x 0.9 inch Weight: 5g File download: http://pan.baidu.com/s/1bpCmfuf(Password:hcow) Applications: PA Driver Amplifier Cellular, PCS, GSM, UMTS Wideband Intrumentation Wireless Data, Satellite Terminals Package Included: 1 x RF Amplifier Note: Please note that the new type and old type of this product will be sent randomly, and make sure you will not mind before ordering. Package List